Schottky barriers based on graphite and InSe

Abstract

Schottky barriers based on the layered semiconductor InSe and graphite were fabricated by vacuum sputtering. Their I-V characteristics at different temperatures were studied. The electrical parameters of the structure were determined, and the current flow mechanisms were analyzed. The photosensitivity spectra of the barrier irradiated from the graphite side in the incident light energy range of 1.2÷3 eB were obtained.