Schottky barriers based on graphite and InSe
| dc.contributor.author | Камінський В.М. | |
| dc.contributor.author | Боледзюк В.Б. | |
| dc.contributor.author | Ткачук І.Г. | |
| dc.contributor.author | Водоп’янов В.М. | |
| dc.contributor.author | Нетяга В.В. | |
| dc.contributor.author | Заполовський М.В. | |
| dc.date.accessioned | 2026-10-02T21:11:26Z | |
| dc.date.issued | 2026-10-01 | |
| dc.description.abstract | Schottky barriers based on the layered semiconductor InSe and graphite were fabricated by vacuum sputtering. Their I-V characteristics at different temperatures were studied. The electrical parameters of the structure were determined, and the current flow mechanisms were analyzed. The photosensitivity spectra of the barrier irradiated from the graphite side in the incident light energy range of 1.2÷3 eB were obtained. | |
| dc.identifier.citation | https://journals.pnu.edu.ua/index.php/pcss/article/view/9803/10578 | |
| dc.identifier.issn | 2309-8589 | |
| dc.identifier.uri | https://dspace.chnu.edu.ua/handle/123456789/14918 | |
| dc.language.iso | en | |
| dc.publisher | Physics and Chemistry of Solid State | |
| dc.subject | indium selenide | |
| dc.subject | graphite | |
| dc.subject | Schottky barrier | |
| dc.subject | I-V characteristics | |
| dc.subject | photosensitivity | |
| dc.title | Schottky barriers based on graphite and InSe | |
| dc.type | Article |
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